Date of Award
8-2006
Level of Access Assigned by Author
Campus-Only Thesis
Degree Name
Master of Science (MS)
Department
Electrical and Computer Engineering
Advisor
David E. Kotecki
Second Committee Member
Donald M. Hummels
Third Committee Member
Richard O. Eason
Abstract
An increasing demand for multi-GHz direct digital synthesizers has prompted research for high-speed phase to amplitude converters. A high-speed read-only memory (ROM) look-up table operating at 20-40 GHz range clock frequency can be used as a high-speed phase to amplitude converter. A 16x6-bit ROM, employing an architecture suitable for use as a phase to amplitude converter for DDS, has been implemented in InP double heterojunction bipolar transistor (DHBT) technology. The ROM uses a -3.8 V power supply and dissipates 1.13 W of power. The ROM is implemented in a test circuit that includes an 8-bit accumulator and a 6-bit digital to analog converter (DAC) to facilitate demonstration of high-speed operation. The maximum operating clock frequency is measured to be 36 GHz. To increase the bit size of the ROM two 32x6-bit ROMs were designed. The first 32x6-bit ROM is designed for low power consumption; the second 32x6-bit ROM is designed to operate at maximum clock frequency. The schematic simulation results showed these ROMs operated at 20GHz and 46GHz clock frequency respectively. The low power design consumes 1.95 W and high-speed design consumes 7.07 W of power.
Recommended Citation
Manandhar, Sanjeev, "High Speed ROM for Direct Digital Synthesizer Applications in Indium Phosphide DHBT Technology" (2006). Electronic Theses and Dissertations. 964.
https://digitalcommons.library.umaine.edu/etd/964